Behavioral data of thin-film single junction amorphous silicon (a-Si) photovoltaic modules under outdoor long term exposure

摘要

Four years'behavioraldataofthin-film single junction amorphous\udsilicon (a-Si)photovoltaic(PV)modules installed in a relatively dry\udand sunny inland site with aContinental-Mediterranean climate\ud(in thecityofJaén,Spain)are presented in this article.The shared\uddata contributes to clarify how the Light Induced Degradation(LID)\udimpacts the output power generated by the PV array,especially in\udthe first days of exposure under outdoor conditions. Furthermore,\uda valuable methodology is provided in this data article permitting\udthe assessment of the degradation rate and the stabilization period\udof theP V modules.\udFurther discussions an dinterpretations concerning the data\udshared in this article can be found in ter esearch paper “Char-\udacterization of degradation and evaluation of model parameters of\udamorphous silicon photovoltaic modules under outdoor long term\udexposure” (Kichou etal.,2016) [1].